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| DATA DATA PRELIMINARY SHEET SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES * High fT fT = 5.5 GHz TYP. | S21e | = 10.0 dB TYP. @f = 1.0 GHz, VCE = -10 V, IC = -15 mA 2 PACKAGE DIMENSIONS (in milimeters) _ 2.8+0.2 0.4 +0.1 -0.05 * * * * 1.5 0.65 +0.1 -0.15 High speed switching characteristics Equivalent NPN transistor is the 2SC2351. 0.95 _ 2.9+0.2 Alternative of the 2SA1424. 2 0.95 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCB0 VCE0 VEB0 IC PT Ti Tstg Rating -20 -12 -3.0 -50 200 150 -65 to +150 Unit V V 1.1 to 1.4 0.3 Marking 0.16 +0.1 -0.06 V mA mW C C ELECTRICAL CHARACTERISTICS (TA = 25 C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Collector Capacitance Insertion Power Gain Noise Figure Symbol ICB0 IEB0 hFE fT Cre* | S21e | NF 2 PIN CONNECTIONS 1: Emitter 2: Base 3: Collector Marking: T93 Test Conditions VCB = -10 V VEB = -2 V VCE = -10 V, IC = -15 mA VCE = -10 V, IC = -15 mA VCB = -10 V, IE = 0, f = 1 MHz VCE = -10 V, IC = -15 mA, f = 1.0 GHz VCE = -10 V, IC = -3.0 mA, f = 1 GHz MIN. TYP. 0 to 0.1 MAX. -0.1 -0.1 0.4 +0.1 -0.05 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 1 3 Unit A A 20 4.0 40 5.5 0.5 100 GHz 1 pF dB 3 dB 8.0 10.0 2.0 * Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal. hFE Classification Rank Marking hFE FB T93 20 to 100 Document No. P11028EJ1V0DS00 (1st edition) Date Published April 1996 P Printed in Japan (c) 1996 2SA1978 SWITCHING CHARACTERISTICS Parameter Turn-on Delay Time Rise Time Turn off Delay Time Fall Time Symbol Vin = 1 V TYP ton (delay) tr toff (delay) tf 1.10 0.77 0.40 0.79 ns ns ns ns Unit SWITCHING TIME MEASUREMENT CIRCUIT VCC ( - ) RC1 RL1 VOUT Vin RS Sampling Oscilloscope 50 VSS ( - ) VOUT RC2 RL2 ton (delay) tr Vin 20 ns toff (delay) tf RE VEE ( + ) Vin = 1 V, VBB = -0.5 V, RC1 = RC2 RS () 160 RC () 1k RL1 () 200 RL2 () 250 RE () 2.7 k VEE (V) 27 VCC (V) 26.3 2 2SA1978 TYPICAL CHARACTERISTICS TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE 400 6 VCE = 10 V f = 1 GHZ NOISE FIGURE VS. COLLECTOR CURRENT PT - Total Power Dissipation - mV NF - Noise Figure - dB 300 4 200 2 100 0 50 100 150 200 0 1 10 IC - Collector Current - mA 100 TA - Ambient Temperature - C BASE TO EMITTER VOLTAGE vs. COLLECTOR CURRENT -10 COLLECTOR SATURATION AND BASE TO EMITTER VOLTAGE VS. COLLECTOR CURRENT -10 -1.0 VCE (sat) - Collector Saturation Voltage - V VBE (sat) - Base Satturation Voltage - V VCE = -1 V VCE = -10 V IC = 10 * IB VBE (ON) - DC Base Voltage - V -1.0 -0.1 -0.1 -0.01 -0.1 -1 -10 -100 -1000 -0.01 -0.1 -1 -10 -100 -1000 IC - Collector Current - mA IC - Collector Current - mA INSERTION GAIN vs. COLLECTOR CURRENT 14 14 f = 1 GHZ VCE = -10 V 10 8 6 VCE = -3 V 4 2 0 1 10 IC - Collector Current - mA 100 VCE = -1 V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT f = 1 GHZ S21e 2 - Insertion Power Gain - dB fT - Gain Bandwidth Product - GHZ 12 12 VCE = -10 V 10 8 6 4 2 0 1 10 IC - Collector Current - mA 100 VCE = -3 V VCE = -1 V 3 2SA1978 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2 f = 1 MHz 30 Cre - Collector Capacitance - pF 1.5 |S21e|2- Insertion Power Gain - dB INSERTION GAIN vs. FREQUENCY 20 VCE = -10 V IC = -15 mA 10 1 0 0.5 VCE = 1 V IC = -5 mA -10 0 1 10 VCBO - Collector to Base Voltage - V 100 100 200 300 500 1000 3000 f - Frequency - MHz 100 DC CURRENT GAIN vs. COLLECTOR CURRENT 100 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = -10 V hFE - DC Current Gain 10 hFE - DC Current Gain VCE = -3 V VCE = -2 V VCE = -1 V 10 1 -0.1 -1 -10 -100 -1000 1 -0.1 -1 -10 -100 -1000 Ic - Collector Current - mA Ic - Collector Current - mA 4 2SA1978 S-PARAMETER S11 3 GHZ 3 GHZ VCE = -10 V, IC = -15 mA f = 100 MHZ f = 100 MHZ VCE = -1 V, IC = -5 mA S22 VCE = -10 V, IC = -15 mA 3 GHZ 3 GHZ VCE = -1 V, IC = -5 mA 100 MHZ 100 MHZ 5 2SA1978 S-PARAMETER (VCE = 1 V, IC = 5 mA, Zo = 50 ) f MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 MAG 0.527 0.468 0.427 0.407 0.393 0.388 0.386 0.388 0.392 0.394 0.399 0.405 0.410 0.416 0.422 0.431 0.438 0.445 0.451 0.460 0.465 0.473 0.481 0.487 0.493 S11 ANG - 47.1 - 83.4 - 109 - 128 - 143 - 154 - 164 - 172 - 179 174 169 163 159 154 150 147 143 140 136 133 130 127 125 122 119 MAG 10.5 8.37 6.63 5.36 4.46 3.82 3.34 2.96 2.67 2.43 2.24 2.07 1.93 1.81 1.71 1.62 1.54 1.47 1.41 1.35 1.30 1.26 1.21 1.17 1.14 S21 ANG 149. 128. 114. 104. 96.6 90.2 84.9 80.1 75.8 71.6 68.1 64.6 61.3 58.0 54.9 52.0 49.3 46.6 44.1 41.5 39.2 36.9 34.8 32.5 30.6 MAG 0.0359 0.0584 0.0729 0.0835 0.0930 0.100 0.109 0.118 0.128 0.137 0.147 0.158 0.168 0.179 0.190 0.201 0.213 0.224 0.236 0.248 0.261 0.273 0.286 0.299 0.312 S12 ANG 70.6 58.7 53.6 52.1 52.1 53.1 53.3 54.4 55.6 56.4 56.9 57.2 57.6 57.7 57.7 57.7 57.5 57.2 56.8 56.3 55.7 55.1 54.3 53.3 52.6 MAG 0.881 0.716 0.586 0.503 0.443 0.401 0.373 0.351 0.332 0.319 0.306 0.298 0.289 0.280 0.274 0.267 0.262 0.259 0.252 0.247 0.243 0.239 0.234 0.235 0.230 S22 ANG - 21.1 - 34.2 - 40.9 - 44.3 - 45.8 - 46.7 - 47.7 - 49.1 - 50.1 - 51.4 - 53.2 - 54.5 - 57.0 - 59.3 - 61.2 - 64.4 - 66.7 - 70.3 - 73.6 - 76.3 - 80.2 - 84.4 - 87.2 - 91.9 - 95.9 6 2SA1978 S-PARAMETER (VCE = 3 V, IC = 5 mA, Zo = 50 ) f MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 MAG 0.558 0.485 0.423 0.381 0.353 0.339 0.329 0.325 0.325 0.326 0.330 0.335 0.339 0.345 0.351 0.360 0.366 0.374 0.382 0.390 0.396 0.404 0.413 0.418 0.427 S11 ANG - 37.1 - 67.9 - 92.5 - 111 - 127 - 140 - 151 - 160 - 169 - 176 177 170 165 160 155 151 147 143 140 137 133 130 127 125 122 MAG 11.0 9.13 7.48 6.21 5.18 4.47 3.92 3.48 3.14 2.87 2.64 2.44 2.28 2.13 2.01 1.90 1.81 1.72 1.65 1.58 1.52 1.46 1.41 1.36 1.32 S21 ANG 153. 133. 119. 109. 101. 95.1 89.9 84.9 80.7 76.9 73.0 69.6 66.5 63.3 60.2 57.4 54.6 52.0 49.5 47.0 44.6 42.4 40.2 38.0 35.9 MAG 0.0288 0.0467 0.0611 0.0703 0.0801 0.0880 0.0938 0.104 0.113 0.122 0.131 0.140 0.150 0.160 0.170 0.181 0.191 0.202 0.213 0.223 0.233 0.243 0.251 0.273 0.255 S12 ANG 74.3 83.0 58.1 56.5 56.1 56.7 57.5 57.9 58.7 59.5 60.5 61.2 61.3 61.9 61.9 61.8 61.8 61.7 61.3 61.0 60.4 60.2 59.4 58.9 58.2 MAG 915 784 670 590 531 490 461 438 419 408 393 386 377 366 362 354 349 344 337 334 328 321 318 314 303 S22 ANG - 16.3 - 27.0 - 33.0 - 36.0 - 37.4 - 38.1 - 33.8 - 39.8 - 40.4 - 41.6 - 42.8 - 44.0 - 45.9 - 47.5 - 49.0 - 51.0 - 53.0 - 55.5 - 58.1 - 60.4 - 63.0 - 65.9 - 68.3 - 72.1 - 74.8 7 2SA1978 S-PARAMETER (VCE = 10 V, IC = 5 mA, Zo = 50 ) f MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 MAG 0.529 0.548 0.463 0.400 0.349 0.316 0.292 0.277 0.267 0.261 0.259 0.260 0.263 0.267 0.272 0.280 0.286 0.293 0.300 0.308 0.315 0.325 0.333 0.341 0.348 S11 ANG - 28.8 - 53.5 - 73.9 - 91.4 - 106 - 119 - 131 - 141 - 152 - 160 - 169 - 177 176 169 164 159 154 149 145 141 138 134 131 128 125 MAG 11.3 9.70 8.20 6.94 5.86 5.09 4.49 4.00 3.63 3.31 3.04 2.82 2.63 2.46 2.32 2.20 2.09 1.99 1.90 1.82 1.75 1.68 1.63 1.57 1.52 S21 ANG 156. 138. 124. 114. 106. 100. 94.6 89.7 85.4 81.5 77.9 74.5 71.3 68.2 65.3 62.5 59.8 57.3 54.8 52.3 49.9 47.6 45.5 43.3 41.2 MAG 0.0234 0.0412 0.0530 0.0620 0.0712 0.0793 0.0860 0.0938 0.101 0.109 0.117 0.125 0.133 0.143 0.152 0.161 0.171 0.191 0.192 0.201 0.212 0.223 0.235 0.246 0.258 S12 ANG 75.4 67.4 62.1 59.7 58.9 59.8 59.6 60.4 61.3 61.9 62.8 63.2 63.9 64.4 64.5 64.6 64.9 64.8 64.4 64.5 63.9 63.8 63.2 62.7 62.1 MAG 0.939 0.836 0.739 0.666 0.608 0.567 0.539 0.516 0.498 0.485 0.472 0.463 0.455 0.448 0.440 0.434 0.428 0.423 0.417 0.413 0.408 0.402 0.397 0.395 0.388 S22 ANG - 12.8 - 21.7 - 27.2 - 29.9 - 31.4 - 31.9 - 32.7 - 33.5 - 34.2 - 35.1 - 35.9 - 36.9 - 38.4 - 39.5 - 40.8 - 42.5 - 44.1 - 46.0 - 47.8 - 49.7 - 51.9 - 54.3 - 56.1 - 58.7 - 61.0 8 2SA1978 S-PARAMETER (VCE = 10 V, IC = 15 mA, Zo = 50 ) f MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 MAG 0.354 0.290 0.247 0.226 0.215 0.210 0.208 0.211 0.215 0.218 0.225 0.232 0.237 0.244 0.251 0.261 0.268 0.276 0.284 0.292 0.299 0.308 0.317 0.324 0.332 S11 ANG - 46.6 - 81.8 - 107 - 126 - 141 - 154 - 164 - 172 179 172 166 160 156 151 147 143 140 137 134 131 128 125 123 121 119 MAG 17.87 13.45 10.35 8.294 6.799 5.805 5.050 4.475 4.008 3.647 3.345 3.086 2.871 2.685 2.532 2.392 2.265 2.155 2.059 1.974 1.897 1.826 1.763 1.697 1.646 S21 ANG 147. 125. 113. 104. 97.8 92.4 88.1 84.1 80.5 77.2 74.2 71.1 68.4 65.7 63.2 60.5 58.2 55.7 53.5 51.1 49.0 46.9 44.7 42.7 40.7 MAG 0.0190 0.0317 0.0420 0.0518 0.0626 0.0720 0.0820 0.0919 0.102 0.112 0.121 0.133 0.143 0.153 0.165 0.174 0.185 0.196 0.207 0.219 0.230 0.242 0.252 0.264 0.276 S12 ANG 74.6 70.0 68.4 68.3 69.8 70.8 71.0 70.9 70.9 70.7 70.9 70.3 70.2 69.7 69.2 68.7 68.0 67.3 66.5 65.8 65.1 64.2 63.3 62.4 61.5 MAG 866 708 601 539 497 470 450 435 423 415 405 400 394 386 381 376 373 366 360 356 350 345 341 337 331 S22 ANG - 18.3 - 26.9 - 29.8 - 30.5 - 30.2 - 30.1 - 30.2 - 30.6 - 31.1 - 32.2 - 32.9 - 34.2 - 35.7 - 36.8 - 38.4 - 39.9 - 41.6 - 43.7 - 45.7 - 47.5 - 49.7 - 51.8 - 53.8 - 56.7 - 58.8 9 2SA1978 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard : Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
Price & Availability of 2SA1978
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